Coexistence of the Cu3Au type ordered structure and the fine modulation in CdxZn1-xTe epilayers grown on GaAs substrates
- 1. Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
- 2. Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowoon-ku, Seoul 139-701 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-ku, Daejeon 305-701 (Korea, Republic of)
Description
Selected-area electron diffraction pattern (SADP) and transmission electron microscopy (TEM) measurements were carried out to investigate the spontaneously ordered structure in CdxZn1-xTe epitaxial layers grown on (001) GaAs substrates. The SADP showed superstructure reflections with symmetrical intensity, and the high-resolution TEM (HRTEM) image showed doublet periodicity in the contrast of the {100} and {110} lattice planes. The results of the SADP and HRTEM measurements showed that Cu3Au type ordered structures were formed in the CdxZn1-xTe epitaxial layers. The dark-field TEM image showed that the size of the Cu3Au type ordered domains with a rectangular-like shape was approximately 15∼30 nm thick, with widths ranging from 30 to 200 nm. Fine modulations in the ordered domains were also observed. These results provide important information on the microstructural properties for enhancing the efficiencies of CdxZn1-xTe-based optoelectronic devices operating at the blue-green region of the spectrum
Additional details
Identifiers
- DOI
- 10.1063/1.1517177;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 17
- Journal Page Range
- p. 3200-3202
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35017761
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CADMIUM COMPOUNDS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TELLURIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC COMPOUNDS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MICROSCOPY; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2002 American Institute of Physics.