Published July 1990 | Version v1
Journal article Metadata-only

Determination of sputter damage on InP by MAI ellipsometry

Creators

  • 1. Deutsche Bundespost TELEKOM Forschungsinstitut beim FTZ, Darmstadt (Germany, F.R.)

Description

InP wafers were ion-beam-etched using different energies. The damaged surfaces were investigated by ellipsometry at different angles of incidence as a function of wavelength. Penetration depths and changes in refractive indices nD-iKD are shown. Si3N4-coated sputter-etched InP wafers are also measured with multiple angle of incidence (MAI) ellipsometry. Coatings are removed step by step by wet chemical etching, and MAI ellipsometry is carried out after each step. The results are fitted to the model InP/sputter-damaged layer/Si3N4. The parameter for the damaged layers are given. (author)

Additional details

Publishing Information

Journal Title
Surface and Interface Analysis
Journal Volume
16
Journal Issue
1-12
Series
Surf. Interface Anal.
Journal Page Range
77-81
ISSN
0142-2421
CODEN
SIAND

Conference

Title
European conference on applications of surface and interface analysis (ECASIA '89).
Dates
23-27 Oct 1989.
Place
Antibes (France).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
22000645
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DEPTH; ETCHING; EV RANGE 10-100; EV RANGE 100-1000; INCIDENCE ANGLE; INDIUM PHOSPHIDES; ION BEAMS; REFRACTIVE INDEX; SILICON NITRIDES; SPATIAL DISTRIBUTION; SPUTTERING; SURFACE CLEANING
Descriptors DEC
BEAMS; CLEANING; DIMENSIONS; DISTRIBUTION; ENERGY RANGE; EV RANGE; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SURFACE FINISHING