Effect of annealing in vapours of eigen components on light absorption in the Urbakh edge range of CdSe

The effect of stoichiometry disturbance on the Urbakh section of CdSe edge absorption is investigated by the methods of linear and nonlinear optics. It is ascertained that linear absorption edge blurring increases, brightening threshold rises and absorption factor changes during transition from low radiation intensities to high ones as the concentration of small acceptors grows. It is established that brightening is related to the recharge of acceptors whose depth of occurrence is ∼ 0.1 eV. These acceptors are part of complex luminescence centers which give rise to luminescence bands with maxima at 1.73 and 1.2 eV