Temperature-dependent Coulomb excitations in silicene
Creators
- 1. Department of Physics, National Cheng Kung University, Tainan, Taiwan 701, Taiwan (China)
Description
The temperature-dependent Coulomb screening and excitation spectrum of electrons in silicene are studied by the tight-binding model and the random-phase approximation. With the spin–orbit interaction, monolayer silicene is a narrow-gap semiconductor. At finite temperatures, the interplay between the intraband and interband transitions could lead to an undamped plasmon mode at low frequencies. The plasmon mode only exists in a limited region of temperature and momentum, corresponding to the constrained gap transition. Beyond that region, another damped plasmon mode dominates the excitation spectrum. The drastic change in the plasmon behavior might be observed experimentally, which could allow for the identification of the spin–orbit energy gap. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/16/12/125002Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 16
- Journal Issue
- 12
- Journal Page Range
- [10 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46052806
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- COULOMB EXCITATION; ELECTRONIC STRUCTURE; ENERGY GAP; L-S COUPLING; RANDOM PHASE APPROXIMATION; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- APPROXIMATIONS; CALCULATION METHODS; COUPLING; ENERGY-LEVEL TRANSITIONS; EXCITATION; INTERMEDIATE COUPLING; MATERIALS