Nature of proper point structural defects in indium arsenide and theirs effect on electrophysical properties of monocrystals

InAs monocrystals grown under conditions of varying deviation of the melt composition from the stoichiometry were investigated by hydrostatic weighing, precision measurement of the lattice parameter and measurement of electrophysical properties, viz. concentration, mobility and life of the charge carriers. The nature is established of the inherent structural point defects in the monocrystals at various deviation of the composition from the stoichiometry was shown to affect the concentration, mobility and life of the charge carriers in InAs monocrystals