Use of the emission Moessbauer spectroscopy in semiconductor physics
Creators
- 1. Kirovskij Politekhnicheskij Inst. (USSR)
- 2. AN SSSR, Leningrad. Inst. Poluprovodnikov
Description
The data accumulated in the field of sub- and overthreshold radiation-induced defect formation in semiconductors using the emission Moessbauer spectroscopy (EMS) are considered. The lifetime of metastable radiation-induced defects and their stabilization forms are determined. The problems of implantation and neutron doping of semiconductors are discussed. The problems of implantation and neutron doping of semiconductors are discussed. The application of EMS to study the impurity atoms state in semiconductors is investigated. The problems of complex formation and compensation of the excess charge of impurity atoms, and electron exchange between them are stated as well as the effect of amorphization on the impurity atom state in semiconductors
Additional details
Additional titles
- Original title (Russian)
- Применение эмиссионной мессбауэровской спектроскопии в физике полупроводников
Publishing Information
- Publisher
- Shtiintsa.
- Imprint Place
- Kishinev (USSR)
- Imprint Pagination
- 122 p.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 15011345
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; AMORPHOUS STATE; CRYSTAL DEFECTS; CRYSTALS; DOPED MATERIALS; EMISSION SPECTRA; ENERGY LEVELS; LIFETIME; MOESSBAUER EFFECT; MOESSBAUER SPECTROMETERS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CRYSTAL STRUCTURE; GAMMA SPECTROMETERS; MATERIALS; MEASURING INSTRUMENTS; RADIATION EFFECTS; SPECTRA; SPECTROMETERS
Optional Information
- Notes
- 148 refs.; 32 figs.