Stress control in ZnO films on GaN/Al2O3 via wet oxidation of Zn under various temperatures
Creators
- 1. Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
- 2. Department of Chemistry, GC University Lahore, 54000 Lahore (Pakistan)
Description
Stress and lattice constants are significant factors considered in evaluating the deformation mode of crystalline materials. Zinc oxide (ZnO) nanostructured thin films were prepared via the process of wet oxidation of Zn at temperatures varying from 420 to 570 °C. Structural, elemental and optical characterizations were carried out using various techniques, to investigate the properties of the samples. Scanning electron microscopy (SEM) images showed improvement in the ZnO structure and the grain size of the ZnO became larger as the oxidation temperature was increased, while maintaining a constant flow rate of wet oxygen. X-ray diffraction (XRD) patterns also showed that ZnO films suffered from compressive stress due to elongation in the lattice constant. With increase in the oxidation temperature, the compressive stress became tensile stress because of the decrease in the lattice constants. Photoluminescence (PL) spectra revealed the influence of stress on the energy band gap, with wet oxidation further giving rise to the transition of stress from compressive to tensile.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2012.01.114Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2012.01.114;
- PII
- S0169-4332(12)00148-1;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 258
- Journal Issue
- 13
- Journal Page Range
- p. 5200-5205
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44030608
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM OXIDES; DIFFUSION; EPITAXY; GALLIUM NITRIDES; GRAIN SIZE; LATTICE PARAMETERS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SPECTRA; STRESSES; SUBSTRATES; THIN FILMS; WET OXIDATION PROCESSES; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; FILMS; GALLIUM COMPOUNDS; LUMINESCENCE; MANAGEMENT; MICROSCOPY; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; PROCESSING; SCATTERING; SIZE; WASTE MANAGEMENT; WASTE PROCESSING; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.