Published April 15, 2012 | Version v1
Journal article

Stress control in ZnO films on GaN/Al2O3 via wet oxidation of Zn under various temperatures

  • 1. Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)
  • 2. Department of Chemistry, GC University Lahore, 54000 Lahore (Pakistan)

Description

Stress and lattice constants are significant factors considered in evaluating the deformation mode of crystalline materials. Zinc oxide (ZnO) nanostructured thin films were prepared via the process of wet oxidation of Zn at temperatures varying from 420 to 570 °C. Structural, elemental and optical characterizations were carried out using various techniques, to investigate the properties of the samples. Scanning electron microscopy (SEM) images showed improvement in the ZnO structure and the grain size of the ZnO became larger as the oxidation temperature was increased, while maintaining a constant flow rate of wet oxygen. X-ray diffraction (XRD) patterns also showed that ZnO films suffered from compressive stress due to elongation in the lattice constant. With increase in the oxidation temperature, the compressive stress became tensile stress because of the decrease in the lattice constants. Photoluminescence (PL) spectra revealed the influence of stress on the energy band gap, with wet oxidation further giving rise to the transition of stress from compressive to tensile.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2012.01.114

Additional details

Identifiers

DOI
10.1016/j.apsusc.2012.01.114;
PII
S0169-4332(12)00148-1;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
258
Journal Issue
13
Journal Page Range
p. 5200-5205
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.