Published January 25, 2003 | Version v1
Journal article

Optical absorption of nanometer-sized band-edge-modulated amorphous silicon-nitrogen films

Description

Optical absorption of nanometer-sized band-edge-modulated (BM) amorphous silicon-nitrogen (a-Si1-xNx:H) films, BM films, are discussed using the effective medium expression and characterized in terms of the optical gap Eg, the value of the slope in Tauc plot B, the Urbach energy Eu and the refractive index n0 as functions of the modulation period L and their correlations between them. Eg in BM film increases with decreasing L without changing n0, i.e., average composition in the film. This results in the quantum-size effect. The values of B are hardly affected by L, while Eu increases with decreasing L. The increase in Eu is not expected from the effective medium expression and attributed to the effect caused by the sinusoidal modulation of the band-edge

Additional details

Identifiers

PII
S0921510702004221;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
97
Journal Issue
2
Journal Page Range
p. 135-140
ISSN
0921-5107
CODEN
MSBTEK

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37046136
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION; CONFINEMENT; CORRELATIONS; FILMS; MODULATION; NANOSTRUCTURES; NITROGEN; REFRACTIVE INDEX; SILICON
Descriptors DEC
ELEMENTS; NONMETALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMIMETALS; SORPTION

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.