Peculiarities of ion sputtering and implantation at glancing bombardment of GaP(001), GaAs(001) and Cu3Au(001)

Ion sputtering and implantation into GaAs(001), GaP(001) and Cu3Au(001) surfaces have been investigated by computer simulation in binary collision approximation at 1-5 keV Se+ and Ne+ ion grazing bombardment. The polar and azimuth angular dependences of sputtering and penetration yield have been calculated and their strong correlations are observed. Angular dependences show a possibility of preferential sputtering of heavy component of two-component single crystals at small glancing angles. The depth distributions of Se+ ions implanted into GaAs(001) have been presented for several azimuth angles of incidence. (authors)