Published July 1, 2018 | Version v1
Journal article

Role of silver nanoparticles deposition temperature on a-Si/μc-Si thin-film solar cell light absorption

  • 1. Department of Metallurgical Engineering, Faculty of Engineering, Cairo University, Cairo, Egypt, 12613 (Egypt)
  • 2. Faculty of Engineering, Zewail City, Cairo, Egypt- currently, visiting researcher, Institute of photovoltaic, University of Stuttgart, Stuttgart (Germany)
  • 3. Department of Surface Treatment and Corrosion Control, Central Metallurgical Research and Development Institute CMRDI, Eltebin, Helwan, Cairo (Egypt)
  • 4. Department of Metallurgical Engineering, Faculty of Engineering, Cairo University, Cairo (Egypt)

Description

Silver nanoparticles thin films are used for effective light trapping of thin film silicon solar cells. In this work, we demonstrate the effect of the substrate temperature of silver nanoparticles thin film deposited upon a-Si:H/μc-Si:H thin film using Physical Vapor Deposition PVD technique, where a silver layer was deposited on a p-i-n junction on ITO glass substrate at different substrate temperatures. The morphology of the silver layer was studied by FESEM and atomic force microscope AFM and found to be consisting of nano-sized particles. The performance of a-Si:H/μc-Si:H thin film solar cell was evaluated by current-voltage measurements and optical absorption. It was observed that the silver nanoparticles size and surface roughness increase with increasing the substrate temperature, however the surface roughness increases only till TS = 200 °C and remains constant at 88 nm. The maximum efficiency was achieved (7.38%) for the substrate temperature of 200 °C. For this condition, the maximum absorption achieved was (74% at 300 nm) and (17% at 500–800 nm, respectively). (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/aacee6

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
5
Journal Issue
7
Journal Page Range
[8 p.]
ISSN
2053-1591