Published June 29, 1992
| Version v1
Journal article
Universal crossover in variable range hopping with Coulomb interactions
Creators
- 1. Raymond and Bererly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel Aviv University, 69978 Ramat Aviv (Israel)
- 2. Department of Physics, City College of the City University of New York, New York, New York 10031 (United States)
Description
Using dimensional analysis, we show that the variable-range-hopping resistivity ρ of disordered systems with Coulomb interactions obeys the scaling form ln(ρ/ρ0)=Af(T/Tx), where f(x) is a universal function and A and Tx are sample-dependent constants. A simple heuristic calculation in three dimensions yields an explicit form, for f(x), which exhibits a smooth-crossover from the Mott (f∝x-1/4) to the Efros-Shklovskii (f∝x-1/2) behaviors. Data on five different samples of compensated n-type CdSe are shown to collapse onto this single function
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 68
- Journal Issue
- 26
- Journal Page Range
- p. 3900-3903.
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24010243
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SELENIDES; COULOMB FIELD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; N-TYPE CONDUCTORS; SCALING LAWS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS