The structure and dielectric properties of a novel kind of doped Ba0.6Sr0.4TiO3 film
- 1. Research Institute of Electronic Science and Technology, University of Electronic Science and Technology, Chengdu 610054 (China)
Description
Mn and Y alternately doped Ba0.6Sr0.4TiO3 film, denoted as Mn/Y-BST film, has been designed and prepared by improved sol–gel method, and the structure and dielectric properties of the film have been studied. Y or Mn doped BST film is also studied. X-ray diffraction reveals that all films grow along (110) orientation and show polycrystalline cubic perovskite structures, and Y3+ and Mn2+ ions enter into B-sites of ABO3 perovskite structure and substitute Ti4+ ions. The Mn/Y-BST film reveals better crystallization with larger crystal grain size. Atomic force microscopy and scanning electron microscopy confirm that the Mn/Y-BST film exhibits better crystallization. X-ray photoelectron spectroscopy shows that the Mn/Y-BST film presents less surface non-perovskite structure. Accordingly, the Mn/Y-BST film exhibits significantly nonlinear improvement in combination of dielectric properties. These results indicate that Mn/Y alternate doping is a novel route to excellent BST films for tunable microwave applications. -- Highlights: ► Mn/Y doping can enhance crystallization and decrease non-perovskite structure. ► Mn/Y doping simultaneously causes low dielectric loss and high figure of merit. ► Mn/Y doping mitigates simultaneous change of dielectric properties of pure BST film. ► Mn/Y alternate doping is novel to get great dielectric film for microwave devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchemphys.2012.06.009Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2012.06.009;
- PII
- S0254-0584(12)00567-6;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 135
- Journal Issue
- 2-3
- Journal Page Range
- p. 1030-1035
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45020048
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CRYSTALLIZATION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DOPED MATERIALS; GRAIN SIZE; MANGANESE IONS; PEROVSKITE; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SURFACES; THIN FILMS; TITANIUM IONS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM IONS
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; FILMS; IONS; MATERIALS; MICROSCOPY; MICROSTRUCTURE; MINERALS; OXIDE MINERALS; PEROVSKITES; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SCATTERING; SIZE; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.