Published August 1, 1981
| Version v1
Journal article
Effect of laser annealing on the critical-current density in Nb3Ge
- 1. Westinghouse RandD Center, Pittsburgh, Pennsylvania 15235
Description
Pulse laser annealing of Nb-Ge superconducting films grown by chemical vapor deposition produces an increase in critical-current density, J/sub c/, if the atomic ratio Nb/Ge is less than three. This J/sub c/ increase is caused by flux pinning on the nucleated Nb5Ge3(sigma) second-phase particles rather than on grain boundaries in the melted and resolidified surface layer. This resolidified layer is amorphous or highly disordered
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 39
- Journal Issue
- 3
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 277-279
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12637678
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRITICAL CURRENT; CURRENT DENSITY; EXPERIMENTAL DATA; FILMS; GERMANIUM ALLOYS; GRAIN BOUNDARIES; INTERMETALLIC COMPOUNDS; LASER-RADIATION HEATING; LAYERS; MAGNETIC FLUX; NIOBIUM BASE ALLOYS; NUCLEATION; PULSES; SOLIDIFICATION; SUPERCONDUCTORS
- Descriptors DEC
- ALLOYS; CHEMICAL COATING; CRYSTAL STRUCTURE; CURRENTS; DATA; DEPOSITION; ELECTRIC CURRENTS; HEAT TREATMENTS; HEATING; INFORMATION; MICROSTRUCTURE; NIOBIUM ALLOYS; NUMERICAL DATA; PLASMA HEATING; SURFACE COATING; TRANSITION ELEMENT ALLOYS