Identification of the additional transition around the E0 critical point in photoreflectance spectra of GaInAsSb epitaxial films

We present the analysis of the photoreflectance (PR) spectra line-shape of GaInAsSb films over GaSb. The studied samples were grown by liquid phase epitaxy technique. The growth parameters such as initial temperature and contact time were the same for all samples, but the precursor solution varied slightly in the As concentration. The cooling rate was different for each sample. The PR spectra were obtained at low temperature, modulated by a 632.8 nm He-Ne laser. These spectra were fitted using the third derivative lorentzian function but, for one of the samples exhibiting an additional structure around the E0 critical point oscillation, it was also necessary to use a first derivative lorentzian function, associated to an excitonic transition. This interpretation of the new PR feature was analyzed according to X-ray diffractograms. Comparing the FWHM of the main peak in the diffractograms it was found that the sample which exhibits the excitonic transition has the best crystalline quality, and was the sample with the lower cooling rate. The excitonic energy value obtained (9.7 meV) is in agreement with the value reported in the related literature.