Published September 15, 2002
| Version v1
Journal article
Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation
- 1. Centre for Electronic Materials and Devices, Department of Chemistry, Imperial College, London, SW7 2AY (United Kingdom)
Description
Rapid-quench scanning tunneling microscopy has been used to monitor the growth by molecular beam epitaxy of InAs quantum dots (QD's) on GaAs(001) at and near the critical coverage (θcrit). Large two-dimensional (2D) islands do not transform into 3D islands at θcrit but instead coexist with small, irregular 3D islands of height 6-12 A (2-4 ML) which contain ∼150 atoms or more. These features develop rapidly (within 0.05 ML of θcrit) into regular mature QD's with an average volume >1x104 atoms. The results provide important constraints for existing theories of the 2D→3D growth mode transition in this complex heteroepitaxial system
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 66
- Journal Issue
- 12
- Journal Page Range
- p. 121307-121307.4
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36001297
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NUCLEATION; QUANTUM DOTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PNICTIDES
Optional Information
- Notes
- (c) 2002 The American Physical Society