Published February 5, 2002 | Version v1
Journal article

Aluminum Superconducting Tunnel Junction as X-ray detector: Technological aspects and phonon decoupling from the substrate

  • 1. INFM, Dipartimento di Scienze Fisiche, Universita' Federico II, Naples (Italy)
  • 2. INFN, Sez. Napoli, Naples (Italy)
  • 3. CNR-Istituto di Cibernetica, I-80078 Pozzuoli, Naples (Italy)
  • 4. CNR-Istituto di Cibernetica, I-80078 Pozzuoli, Naples, Italy and INFN, Sez. Napoli, Naples (Italy)
  • 5. Departments of Applied Physics and Physics, Yale University, New Haven, Connecticut 06520-8284 (United States)
  • 6. Technische Universitat Munchen, Physik Department E15, D-85748 Garching (Germany)
  • 7. INFM, Dipartimento di Fisica, Universita' di Salerno, I-84081, Baronissi, SA (Italy)

Description

We have investigated Al/Al2O3/Al Superconducting Tunnel Junctions (STJs) for their use as X-ray detector. The junctions have been fabricated on sapphire substrates both with and without a SiO buffer layer. It was found that the presence of the SiO significantly changes the Al2O3 tunnel barrier properties. Experiments under X-ray irradiation from 55Fe X-ray source are reported. The spectra show that the SiO buffer layer succeeds in reducing the events coming from the phonons generated into the substrate. Besides, the charge yield is about 85% for STJs with the SiO buffer layer, quite high in comparison with the 5% of STJs without the buffer layer

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
605
Journal Issue
1
Journal Page Range
p. 157-160
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
9. international workshop on low temperature detectors
Dates
22-27 Jul 2001
Place
Madison, WI (United States)

Optional Information

Notes
(c) 2002 American Institute of Physics.