Published April 30, 2017 | Version v1
Journal article

Crystallization-mediated amorphous CuxO (x = 1, 2)/crystalline CuI p–p type heterojunctions with visible light enhanced and ultraviolet light restrained photocatalytic dye degradation performance

Description

Highlights: • CuxO(x = 1, 2)/CuI p–p type heterojunctions were facilely constructed via crystallization-mediated approaches. • CuxO/CuI heterojunctions exhibit effective visible-light-driven photocatalytic activity for dye degradation. • The CuxO/CuI interface can enhance the spatial separation of the photogenerated electron–hole pairs. • This work represents a critical step for mass production of functional semiconductor heterojunctions in a mild manner. - Abstract: We report simple and cost-effective fabrication of amorphous CuxO (x = 1, 2)/crystalline CuI p–p type heterojunctions based on crystallization-mediated approaches including antisolvent crystallization and crystal reconstruction. Starting from CuI acetonitrile solution, large crystals in commercial CuI can be easily converted to aggregates consisting of small particles by the crystallization processes while the spontaneous oxidation of CuI by atmospheric/dissolved oxygen can induce the formation of trace CuxO on CuI surface. As a proof of concept, the as-fabricated CuxO/CuI heterojunctions exhibit effective photocatalytic activity towards the degradation of methyl blue and other organic pollutants under visible light irradiation, although the wide band-gap semiconductor CuI is insensible to visible light. Unexpectedly, the CuxO/CuI heterojunctions exhibit restrained photocatalytic activity when ultraviolet light is applied in addition to the visible. It is suggested that the CuxO/CuI interface can enhance the spatial separation of the electron–hole pairs with the excitation of CuxO under visible light and prolong the lifetime of photogenerated charges with high redox ability. The present work represents a critically important step in advancing the crystallization technique for potential mass production of semiconductor heterojunctions in a mild manner.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2017.01.069

Additional details

Identifiers

DOI
10.1016/j.apsusc.2017.01.069;
PII
S0169-4332(17)30069-7;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
402
Journal Page Range
p. 31-40
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.