Radiation damage to electronic components

Characteristic properties are presented of some 40 different electronic components (resistors, capacitors, diodes, transistors, and integrated circuits) which were irradiated in a nuclear reactor up to 1015n/cm2(E>1MeV). Complete circuits (e.g. rf amplifiers and detectors, mixers, differential amplifiers, voltage-to-frequency converters, oscillators, power supplies) were irradiated near the CERN Intersecting Storage Rings up to 106 Rad (RPL) (dose measured with radiophotoluminescent dosimeters) under simulated operational conditions. Representative measured parameters, such as resistance, capacitance, forward voltage, reverse current, toggle frequencies, are given in graphs as a function of radiation dose. The results are discussed in detail and lead to the over-all conclusion that the operation of electronic components and circuits is seriously affected by radiation environments with doses in the order of 1013n/cm2 or 104 Rad (RPL); some components and circuits fail completely at doses of 1014n/cm2 or 105 Rad (RPL). (Auth.)