Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth

Highlights: • Effective segregation of Ge in B and Ge codoped Czochralski-Si crystal growth was analyzed. • The equilibrium segregation coefficient of Ge was calculated. • The experimentally results were analytically analyzed using partitioning theory. - Abstract: The segregation of Ge in B and Ge codoped Czochralski (CZ)-Si crystal growth was investigated. The concentration of Ge in heavily Ge codoped CZ-Si was measured by electron probe micro analysis (EPMA) and X-ray fluorescence spectroscopy. The effective segregation coefficient of Ge (k_eff) was calculated by fitting the EPMA data to the normal freezing equation, and by taking the logarithmic ratio of the Ge concentrations at the seed and tail of the ingots (top to bottom approach). The k_eff of Ge increased from 0.30 to 0.55, when the initial Ge concentration in the Si melt (C_L(o)^Ge) was increased from 3 × 10¹⁹ to 3 × 10²¹ cm⁻³. To avoid cellular growth, the crystal pulling rate was decreased for heavily Ge codoped crystal growth (C_L(o)^Ge > 3 × 10²⁰ cm⁻³). The equilibrium segregation coefficient (k₀) of Ge was calculated by partitioning theory, and was smaller than the experimentally estimated k_eff. The variation of k_eff from k₀ was discussed based on Ge clustering in the heavily Ge codoped crystal, which led to changes in the bonding and strain energies caused by the incorporation of Ge into Si