Numerical simulation of spin-qubit operation in coupled quantum dots
Creators
- 1. Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
Description
Electronic states and spin operation in coupled quantum dots are numerically studied, considering realistic shape of quantum dots and electron-electron interaction. (i) We evaluate the spin coupling J between two electron spins, as a function of magnetic field perpendicular to the quantum dots. We observe a transition from antiferromagnetic coupling (J>0) to ferromagnetic coupling (J<0) at magnetic field of a few Tesla. The spin coupling is hardly influenced by the size difference between the quantum dots if the energy levels are matched. (ii) We simulate SWAP gate operations by calculating the time development of two electron spins. We show that a sudden change of tunnel barrier may result in the gate errors. The spin exchange is incomplete in the presence of strong spin-orbit interaction in InGaAs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.200673265Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Conferences
- Journal Volume
- 4
- Journal Issue
- 2
- Journal Page Range
- p. 554-556
- ISSN
- 1610-1634
Conference
- Title
- International conference on superlattices, nano-structures and nano-devices (ICSNN-2006)
- Dates
- 30 Jul - 4 Aug 2006
- Place
- Istanbul (Turkey)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 38025002
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIFERROMAGNETISM; COMPUTERIZED SIMULATION; ELECTRON-ELECTRON INTERACTIONS; ELECTRONIC STRUCTURE; ENERGY LEVELS; ERRORS; FERROMAGNETISM; GALLIUM ARSENIDES; INDIUM ARSENIDES; J-J COUPLING; L-S COUPLING; MAGNETIC FIELDS; QUANTUM DOTS; QUBITS; SEMICONDUCTOR MATERIALS; SPIN EXCHANGE; SPIN ORIENTATION; TIME DEPENDENCE; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COUPLING; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; INTERACTIONS; INTERMEDIATE COUPLING; LEPTON-LEPTON INTERACTIONS; MAGNETISM; MATERIALS; NANOSTRUCTURES; ORIENTATION; PARTICLE INTERACTIONS; PNICTIDES; QUANTUM INFORMATION; SIMULATION
Optional Information
- Notes
- With 2 figs., 6 refs.. SICI: 1610-1634(200702)4:2<554::AID-PSSC200673265>3.0.TX;2-E