The Investigation of Ion Implantation as a Technique for Manufacturing GaAs Magneto-Sensitive Detectors

This paper studies thin active layers of n - n _i and n ⁺- n - n _i -types produced by means of silicon ion implantation into a semi-insulating GaAs substrate. The results of these structures' physical parameters investigation are presented. Based on the structures the Hall-effect sensors are designed that have the linearity of Hall voltage dependency on magnetic density U_H(B) of at least 1% in the range of up to B<1.2 T. (paper)