Published September 20, 2012 | Version v1
Journal article

Crystal and phonon structure of ZnSiP2, a II-IV-V2 semiconducting compound

  • 1. Departamento de Física, Universidad de Pamplona, Pamplona 54518000 (Colombia)
  • 2. Laboratorio de Física Aplicada, ULA, Mérida 5101 (Venezuela, Bolivarian Republic of)
  • 3. Laboratorio de Cristalografía, ULA, Mérida 5101 (Venezuela, Bolivarian Republic of)
  • 4. Centro de Estudios en Semiconductores, ULA, Mérida 5101 (Venezuela, Bolivarian Republic of)

Description

Using single-crystal X-ray diffraction and Raman spectroscopy, the characterization of a member of the II-IV-V2 family of semiconducting compounds, ZnSiP2, is presented in this work. The diffraction experiment showed that ZnSiP2 crystallizes in a chalcopyrite-type of structure (space group: I4¯2d) with unit cell parameters a = 5.407(9) Å and c = 10.454(2) Å. The structure is based on a cubic close-packed arrangement of phosphorus atoms with the two cations in an orderly way occupying one-half of the tetrahedral sites. In this structure, two Zn and two Si are bonded to each phosphorus atom and four phosphorus atoms are bonded to each cation. The results obtained are consistent with previous reports. Raman spectroscopy, Group Theory, and a modified correlation method allowed the assignment of the characteristics of the thirteen first-order Raman active optical vibrational modes observed for this material.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2011.12.046

Additional details

Identifiers

DOI
10.1016/j.mseb.2011.12.046;
PII
S0921-5107(11)00583-6;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
177
Journal Issue
16
Journal Page Range
p. 1465-1469
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
Symposium on advances in semiconducting materials
Acronym
20. international materials research congress
Dates
14-19 Aug 2011
Place
Cancun (Mexico)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44110057
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHALCOPYRITE; GROUP THEORY; MONOCRYSTALS; PHOSPHORUS; RAMAN SPECTROSCOPY; SILICON PHOSPHIDES; SPACE GROUPS; X-RAY DIFFRACTION; ZINC PHOSPHIDES
Descriptors DEC
COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELEMENTS; LASER SPECTROSCOPY; MATHEMATICS; MINERALS; NONMETALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; SILICON COMPOUNDS; SPECTROSCOPY; SULFIDE MINERALS; SYMMETRY GROUPS; ZINC COMPOUNDS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.