Growth mode and structural characterization of epitaxial TM/RE thin films

The study of growth conditions optimisation and detailed structural characterization of bilayer epitaxial thin films consisting of a transition metal (V, Cr, Mn) and a magnetic rare-earth (Gd) is presented. Due to the strong relation between the structure and magnetic properties in thin films, the structural characterisation was carried out by means of the following techniques: X-ray reflectometry, extended X-ray absorption fine structure, reflected high-energy electron diffraction and atomic force microscopy. Well defined epitaxial growth of Cr(110) and V(110) on Mo(110) was achieved. The distortion of the the V and Cr lattice was observed by reflected high-energy electron diffraction as a function of layer thickness. The distortion decreases when the thickness of the deposited layer increases approaching the bulk structure for the thickness of 10 ML. A very good agreement between measured and simulated reflectivity profiles was found that enabled determination of the exact constituent layer thickness and the interface roughness