Published 1990
| Version v1
Book
Metalorganic magnetron sputter deposition of In1-xGaxSb on (100)GaAs
Creators
- 1. Lab. for Microstructural Sciences, National Research Council Canada, 100 Sussex Drive, Ottawa (Canada)
- 2. Advanced Devices and Reliability Directorate, Communications Research Centre, Box 11490, Ottawa (Canada)
Description
This paper reports the epitaxial deposition of In1-xGaxSb on (100)GaAs by metalorganic magnetron sputtering. High quality films could be deposited on GaAs over the entire compositional range despite the large lattice mismatch between the film and substrate (14.6% for InSb and 7.8% for GaSb). The composition of the layers was found to be directly related to the trimethylgallium and trimethylindium fluxes at constant growth temperature. Growth rates of 1 μm/hr for the GaSb and 3 μm/hr for the InSb were observed
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-048-8
- Imprint Title
- Layered structures
- Imprint Pagination
- 823 p.
- Journal Page Range
- p. 427-432.
Conference
- Title
- Materials Research Society fall meeting.
- Dates
- 27 Nov - 2 Dec 1989.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22013888
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIMONIDES; CHEMICAL COMPOSITION; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MAGNETIC FLUX; MAGNETRONS; ORGANOMETALLIC COMPOUNDS; SPUTTERING; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; ORGANIC COMPOUNDS; PNICTIDES
Optional Information
- Secondary number(s)
- CONF-891119--.