Formation methods of porous silicon

Full text : The paper deals with the study of the methods of obtaining of porous silicon and its structural analysis, since the porous silicon has been considered to be one of the prospective materials of modern electronics. In order to shape metal-silicon films p- and n- types silicon bases with different dopping levels and distinct have been used. The MS structures were obtained by Unno-Imayo electrolytic method. The large range variation of electrolyte composition makes possible the formation of MS films having different thickness and unlike porosity morphology. The porosity of material has been checked by gravimetric and acoustic methods. In order to make structural analysis and research of the properties of MS films the electronic, acoustic, optical, microscopy and X-ray diffractometry methods have been used