Application of neutron-doped silicon in semiconductor detectors

Silicon neutron doping (nd Si) method allows to produce super high-resistant material with specific resistance of 5 <rho <= 100 koxsm. The way to determine preliminarly the parameters of ndSi-specific resistance or its distribution homogeneity, depending on initial p-silicon properties, is shown. Possibilities to retain and even to increase the lifetime of minor charge carriers after neutron doping with the use of getter processes are considered. Parameters of ndSi detectors made by microelectronic planary technology and tested in different areas of nuclear measuring equipment are presented