Impact of silicon doping on InAs nanowires grown by selective area MOVPE

InAs nanowires are an attractive candidate for the realization of high-speed and low-power electronic devices due to the material's very high room temperature mobility. However, as recently reported by Dayeh et al. their conductivity could be influenced negatively by often observed stacking faults. In this contribution, we have investigated the influence of Si-doping during growth with the aim to tune nanowire conductivity and crystalline structure. The nanowires were deposited by selective area MOVPE on (111)B GaAs masked substrates. The samples were characterized structurally by transmission and scanning electron microscopy. We observed that above a certain partial pressure ratio, doping has an influence on morphology. The nanowires exhibit higher uniformity and specific conductance, but decreasing height vs. diameter aspect ratio as the partial pressure ratio increases. This leads to the question, whether the incorporation of doping atoms or a structural change has the main influence on conductivity.