Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas
- 1. Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq)
- 2. Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq)
Description
Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H2 by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H2 concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H2 gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H2 sensors. It was shown in this study that NiO films have the capability to detect H2 concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2017.03.037Additional details
Identifiers
- DOI
- 10.1016/j.physb.2017.03.037;
- PII
- S0921-4526(17)30163-1;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 514
- Journal Page Range
- p. 78-84
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48065600
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AIR; ATOMIC FORCE MICROSCOPY; CONCENTRATION RATIO; GLASS; HYDROGEN; NICKEL OXIDES; PERFORMANCE; PLASMA; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SENSITIVITY; SENSORS; SPECTROSCOPY; SPUTTERING; SUBSTRATES; THICKNESS; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DIMENSIONLESS NUMBERS; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; FLUIDS; GASES; MICROSCOPY; NICKEL COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.