Low power consumption and high temperature durability for radiation sensor

Low power consumption and high temperature operation are important in an environmental monitoring system. The power consumption of 3 mW is achieved for the radiation sensor using low voltage operational amplifier and comparator in the signal processing circuit. The leakage reverse current of photodiode causes the charge amplifier saturation over 50degC. High temperature durability was improved by optimizing the circuit configuration and the values of feedback resistance and capacitance in the charge amplifier. The pulse response of the radiation sensor was measured up to 55degC. The custom detection circuit was designed by 0.6 μm CMOS process at 5-V supply voltage. The operation temperature was improved up to 65degC. (author)