Published January 2004 | Version v1
Journal article

Growth of lanthanum oxide thin films by liquid injection MOCVD using a novel lanthanum alkoxide precursor

  • 1. Department of Chemistry, University of Liverpool, Liverpool (United Kingdom)
  • 2. Epichem Oxides and Nitrides, Power Road, Bromborough, Wirral, Merseyside (United Kingdom)
  • 3. Department of Materials Science and Engineering, University of Liverpool (United Kingdom)
  • 4. Institute of Surface Science and Technology, University of Loughborough (United Kingdom)

Description

Carbon-free lanthanum oxide is deposited by liquid injection MOCVD over a wide temperature range (300-600 C) in the presence of oxygen using a new volatile lanthanum alkoxide precursor [La(mmp)3]. SEM of a typical lanthanum oxide film deposited at 450 C from a [La(mmp)3]/tetraglyme mixture in toluene reveals a columnar growth structure with XRD reflection pattern and intensity approximately consistent with that of La2O3 powder. The paper suggests the suitability of this low temperature process for the deposition of high-κ lanthanum oxide films as gate dielectric for Si-based TFTs. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/cvde.200304164

Additional details

Identifiers

Publishing Information

Journal Title
Chemical Vapor Deposition
Journal Volume
10
Journal Issue
1
Journal Page Range
p. 13-17
ISSN
0948-1907
CODEN
CVDEFX

Optional Information

Notes
With 4 figs., 2 tabs., 28 refs.. SICI: 0948-1907(20040116)10:1<13::AID-CVDE200304164>3.0.TX;2-K