Published May 1, 2021
| Version v1
Journal article
Theoretical Estimation of Electronic Flow Rate at Al-TiO2 Interfaces System
Creators
- 1. Department of Physics, College of Education for Pure Science, Ibn Al-Haitham, University of Baghdad (Iraq)
- 2. Al Turath University of College, Baghdad (Iraq)
Description
The mechanism of the electronic flow rate at Al-TiO2 interfaces system has been studied using the postulate of electronic quantum theory. The different structural of two materials lead to suggestion the continuum energy level for Al metal and TiO2 semiconductor. The electronic flow rate at the Al-TiO2 complex has affected by transition energy, coupling strength and contact at the interface of two materials. The flow charge rate at Al-TiO2 is increased by increasing coupling strength and decreasing transition energy. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1879/3/032073Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1879
- Journal Issue
- 3
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- Ibn Al-Haitham International Conference for Pure and Applied Sciences (IHICPS)
- Dates
- 9-10 Dec 2020
- Place
- Baghdad (Iraq)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54103438
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ENERGY LEVELS; FLOW RATE; QUANTUM ELECTRONICS; SEMICONDUCTOR MATERIALS; TITANIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS