Published December 2009
| Version v1
Journal article
Integrated twin modulator switches through MMI splitting and electroabsorption modulation
Description
We present a 1 × 2 multimode interference splitter integrated with duo electroabsorption modulator based switches, one at each output arm. The material structure consists of an InGaAlAs/InGaAlAs multiple-quantum-well active core layer with a dual depletion region active core structure and a large optical cavity waveguide design. The switches exhibited an extinction ratio of up to 10 dB at a driving voltage-swing of 2.0 V
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/24/12/125004Additional details
Identifiers
- DOI
- 10.1088/0268-1242/24/12/125004;
- PII
- S0268-1242(09)25737-3;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 24
- Journal Issue
- 12
- Journal Page Range
- [5 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45011006
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DESIGN; ELECTRIC POTENTIAL; LAYERS; MODULATION; QUANTUM WELLS; WAVEGUIDES
- Descriptors DEC
- NANOSTRUCTURES