Published December 2009 | Version v1
Journal article

Integrated twin modulator switches through MMI splitting and electroabsorption modulation

  • 1. School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)
  • 2. Tyndall National Institute, Cork, Republic of Ireland (Ireland)
  • 3. Data Storage Institute (DSI) (Singapore)

Description

We present a 1 × 2 multimode interference splitter integrated with duo electroabsorption modulator based switches, one at each output arm. The material structure consists of an InGaAlAs/InGaAlAs multiple-quantum-well active core layer with a dual depletion region active core structure and a large optical cavity waveguide design. The switches exhibited an extinction ratio of up to 10 dB at a driving voltage-swing of 2.0 V

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/24/12/125004

Additional details

Identifiers

DOI
10.1088/0268-1242/24/12/125004;
PII
S0268-1242(09)25737-3;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
24
Journal Issue
12
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45011006
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DESIGN; ELECTRIC POTENTIAL; LAYERS; MODULATION; QUANTUM WELLS; WAVEGUIDES
Descriptors DEC
NANOSTRUCTURES