Published February 2012
| Version v1
Journal article
Effect of oxides thickness on radiation damage to NPN bipolar transistors
- 1. Graduate University of Chinese Academy of Sicences, Beijing (China)
- 2. Xinjiang Key Laboratory of Electronic Information Material and Device, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi (China)
- 3. National Key Laboratory of Integrated Circuit, Chongqing (China)
Description
Radiation damage,caused by high or low dose rate irradiation, to NPN transistors of different oxide thicknesses is investigated experimentally. The results show that base current of the transistors increased with total dose, but the current gain decreased with increasing total dose. The NPN transistors of thin oxides degraded more than those of ordinary oxide thickness. However, both types of the NPN transistors exhibited the enhanced low dose rate sensitivity (ELDRS). Mechanisms of the effects are discussed. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 35
- Journal Issue
- 2
- Journal Page Range
- p. 104-108
- ISSN
- 0253-3219
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 45021159
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AUGMENTATION; DOSE RATES; ELECTRIC CURRENTS; GAIN; NEPTUNIUM NITRIDES; OXIDES; RADIATION EFFECTS; SENSITIVITY; THICKNESS; TRANSISTORS
- Descriptors DEC
- ACTINIDE COMPOUNDS; AMPLIFICATION; CHALCOGENIDES; CURRENTS; DIMENSIONS; NEPTUNIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSURANIUM COMPOUNDS
Optional Information
- Notes
- 3 figs., 14 refs.