Growth of superconducting LaPd₁ - xBi₂ thin films by molecular beam epitaxy

We have grown thin films of LaPdBi₂ by reactive molecular beam epitaxy on single crystal MgO substrates. Films were grown in a custom designed UHV chamber by the simultaneous evaporation of high purity La, Pd and Bi metals by e-beam evaporators with in situ rate control. Single phase LaPdBi₂ films are stable in a small window of growth temperature. The films were characterised by RHEED, X-ray diffraction and electrical transport measurements. LaPdBi₂ films were epitaxial and c-axis oriented as evident from RHEED and XRD analysis. The Pd deficient LaPdBi₂ thin films showed superconductivity with a superconducting transition of about 3 K. To best of our knowledge this is the first report of the synthesis and superconductivity of LaPdBi₂.