Growth and characterization of triangular-shaped AlGaAs/GaAs and InGaAs/GaAs quantum wire structures

We have investigated the growth of quantum wire structures by using low-pressure metalorganic chemical-vapor deposition with selective area epitaxy. Firstly, the effects of the growth parameters, such as the growth rate, the growth temperature, and the direction of the opened window, were investigated for GaAs/Al0.5Ga0.5As multilayer structures. Secondly, using the optimum growth conditions, we fabricated quantum wire structures with sharp tips and smooth side walls. In0.2Ga0.8As/GaAs quantum wire structures were grown on SiO2 masked GaAs substrates. To characterize and analyze the selectively grown structures, we used scanning electron microscopy and temperature-dependent photoluminescence. The emission peak from quantum wires was observed at 975 nm. With increasing temperature, the emission intensity from the side wall quantum wells decreased abruptly, but the intensity from quantum wires decreased slowly compared to that of side wall quantum wells and even became stronger at about 50 K.