Published May 1987
| Version v1
Journal article
High conversion efficiency and high radiation resistance InP solar cells
- 1. Ibaraki Electrical Communication Lab., Tokai (Japan)
Description
The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)
Additional details
Publishing Information
- Journal Title
- Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku
- Journal Volume
- 36
- Journal Issue
- 5
- Series
- Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku.
- Journal Page Range
- 705-712
- ISSN
- 0415-3200
- CODEN
- DTKKA
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 19009399
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DIFFUSION; EFFICIENCY; ELECTRON BEAMS; FABRICATION; GAMMA RADIATION; INDIUM PHOSPHIDES; IRRADIATION; PERFORMANCE; RADIOSENSITIVITY; SEMICONDUCTOR MATERIALS; SOLAR CELLS
- Descriptors DEC
- BEAMS; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; IONIZING RADIATIONS; LEPTON BEAMS; MATERIALS; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATIONS