Modification of semiconductors by proton beams: radiation defects doping

Published 2000 | Version v1

Miscellaneous Open

1. Sankt-Peterburgskij Gosudarstvennyj Tekhnicheskij Univ., Sankt-Peterburg (Russian Federation)
2. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)

no abstract available

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Original title (Russian): Modifitsirovanie poluprovodnikov puchkami protonov. Legirovanie radiatsionnymi defektami

Publisher: MGU
Imprint Place: Moscow (Russian Federation)
Imprint Title: Theses of reports of the 30. International conference on physics of interaction of charged particles with crystals
Imprint Pagination: 162 p.
Journal Page Range: p. 126
Report number: INIS-RU--460

Title: 30. International conference on physics of interaction of charged particles with crystals
Original Conference Title: 30. Mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates: 29-31 May 2000
Place: Moscow (Russian Federation)

Country of Publication: Russian Federation
Country of Input or Organization: Russian Federation
INIS RN: 34047572
Subject category: S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator: No Abstract, Conference
Descriptors DEI: CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HYDROGEN ADDITIONS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON; VACANCIES
Descriptors DEC: ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS

Notes: Imprint:Tezisy dokladov 30. Mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami