Accumulation and annealing of main compensating radiation-induced defects in p-type Si(Ge)

Effect of germanium impurity on formation and annealing of main compensating radiation-induced defects (RD) in p-type (ρ=10 Ohmxcm) monocrystalline silicon, grown by Czochralski method, is studied. Results are obtained from analysis of temperature dependences of concentration of main charge carriers in reference and Ge-doped up to ≅5x1018cm-3 concentration crystals at different stages of 60Co γ-quanta irradiation and the following isochronous annealing. It is stated that under irradiation two RD with close(Ev+(0.31±2) and ≥Ev+0.35eV), levels, differing in annealing temperature, are formed. Their concentrations ratio depends on germanium availability in crystals. It is supposed that the first of them are carbon-oxygen-divacancy complexes, and the second - interstitial oxygen. peculiarities of accumulation and annealing of these RD in p-Si are explained taking into account the effect of elastic stresses, induced by Ge atoms, on localization of carbon and oxygen impurities in crystals, primary RD diffusion under irradiation and RD annealing activation energy