Published April 1, 1987
| Version v1
Patent
Ion sources
- 1. UKAEA Atomic Energy Research Establishment, Harwell. Materials Physics and Metallurgy Div.
Description
An ion beam source is described which is adapted to provide a plurality of planar ion beams. The centres of the beams are superimposed and their planes are at an angle to the line joining their centres such that the projection of the beams in a direction orthogonal to that joining their centres is continuous. The ion beams are produced by superposed slits in extraction electrodes. The length L, pitch P and angle THETA of the slits are such as to ensure uniform coverage of a target passed through the beams. (author)
Availability note (English)
Available from The Patent Office, 25 Southampton Buildings, London, WC2A 1AY.Additional details
Publishing Information
- Imprint Pagination
- 3 p.
- IPC:
- Int. Cl. H01j37/08.
- IPC
- Int. Cl. H01j37/08.
- Patent number
- GB patent document 2180686/A/
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18096304
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- ION BEAMS; ION IMPLANTATION; ION SOURCES; MILLI AMP BEAM CURRENTS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- BEAM CURRENTS; BEAMS; CURRENTS
Optional Information
- Secondary number(s)
- GB priority 8522976.