Gel-Casting Prepared Porous Si3N4 Ceramics with Different Contents of Y2O3 and Al2O3 Additives
- 1. National Innovation Institute of Defense Technology. Advanced Interdisciplinary Technology Research Center (China)
- 2. Rocket Force University of Engineering (China)
Description
Porous Si3N4 ceramics were prepared via a controlled gel-casting process followed by gas pressure sintering with 8 wt.% Y2O3 and Al2O3 additives. The gel-casting parameters including slurry pH value, AM: MBAM ratio, degassing procedure, drying condition and decarbonize process were optimized, and the effects of different Y2O3: Al2O3 ratios on the microstructure and properties of the Si3N4 ceramics were investigated. With an optimized gel-casting process, a high solid loading of 46.5 vol.% was achieved, and as the Y2O3 content decreased from 6 to 1 wt.%, the porosity of Si3N4 ceramics declined from 36.3 to 27.5% while the β-Si3N4 phase content reduced from 38.9 to 15.0%. The bending strength and elastic modulus of the ceramics varied with different Y2O3: Al2O3 ratios and were influenced by the porosity as well as the tailored interlocking structure of elongated β-Si3N4 grains. The Si3N4 ceramics also exhibited low and stable dielectric constants.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Engineering and Performance
- Journal Volume
- 29
- Journal Issue
- 12
- Journal Page Range
- p. 7891-7898
- ISSN
- 1059-9495
- CODEN
- JMEPEG
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55075030
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADDITIVES; CASTING; CERAMICS; DEGASSING; DIELECTRIC MATERIALS; DRYING; GELATION; GELS; MICROSTRUCTURE; PERMITTIVITY; PH VALUE; POROSITY; POROUS MATERIALS; SINTERING; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; COLLOIDS; DIELECTRIC PROPERTIES; DISPERSIONS; ELECTRICAL PROPERTIES; FABRICATION; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2020 © ASM International 2020