Published 1992 | Version v1
Book

Optimization of MBE of CdTe/CdTe

  • 1. Grumman Corp., Bethpage, NY (United States). Corporate Research Center
  • 2. State Univ. of New York, Stony Brook, NY (United States). Dept. of Materials Science and Engineering

Description

A detailed optimization of MBE growth of CdTe on CdTe (111)B using white beam synchrotron x-ray topography, and x-ray rocking curve analysis has been carried out. Defect structures in (111)B substrates and epilayers are imaged with white beam topography and, for the first time, direct observation of stress induced microtwin growth in CdTe epilayers has been made. X-ray rocking curve analysis of CdTe substrates is shown to be relatively insensitive to defect structures consisting of dislocations and inclusions. On the other hand rocking curve analysis of (111) epilayers reveals a sensitivity to the presence of microtwin. In this paper the defect microstructure of a CdTe (111)B epilayer with the narrowest rocking curve FWHM value published to date (9.4 arc-sec) is discussed

Additional details

Additional titles

Subtitle (English)
Refinement in structural quality evaluation of mbe grown (111) CdTe

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-157-3
Imprint Title
Proceedings of defect engineering in semiconductor growth, processing and device technology
Imprint Pagination
1144 p.
Journal Page Range
p. 169-174.

Conference

Title
1992 Material Research Society (MRS) spring meeting.
Dates
27 Apr - 2 May 1992.
Place
San Francisco, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
24032420
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CADMIUM TELLURIDES; CRYSTAL DEFECTS; EPITAXY; EVALUATION; MICROSTRUCTURE; MOLECULAR BEAMS; OPTIMIZATION; TWINNING; X-RAY RADIOGRAPHY
Descriptors DEC
BEAMS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; TELLURIDES; TELLURIUM COMPOUNDS

Optional Information

Secondary number(s)
CONF-920402--.