Published October 15, 1994
| Version v1
Journal article
Interpretation of infrared data in neutron-irradiated silicon
- 1. Physics Department, Solid State Section, University of Athens, Panepistimiopolis, Zografos, Athens 157 84 (Greece)
- 2. Institute of Nuclear Technology-Radiation Protection, National Centre of Scientific Research ''Demokritos'', Agia Paraskevi, Attikis, Athens 153 10 (Greece)
Description
Czochralski-grown Si samples were irradiated by fast neutrons, at room temperature, with the aim of studying the identity of the defects produced, using infrared spectroscopy. Two localized vibrational modes at 914 and 1000 cm-1 were considered as intermediate defect stages between VO and VO2 complexes. We express the view that they may arise from a [VO+Oi] defect where an interstitial oxygen atom is trapped near a VO pair. Another two peaks at 1032 and 1043 cm-1 were attributed to the VO4 defect and a tentative model of its structure is presented
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 50
- Journal Issue
- 16
- Journal Page Range
- p. 11531-11534.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26019184
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMBIENT TEMPERATURE; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; FAST NEUTRONS; INFRARED SPECTRA; IRRADIATION; RADIATION EFFECTS; SILICON
- Descriptors DEC
- BARYONS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; NEUTRONS; NUCLEONS; SEMIMETALS; SPECTRA