Interaction of diamond (111)-(1 x 1) and (2 x 1) surfaces with OH: a first principles study
Creators
- 1. School of Physics, University of Sydney, NSW 2006 Sydney (Australia)
- 2. Ion Implantation and Surface Studies Research Programme, University of the Witwatersrand, Private Bag 3, Wits 2050, Johannesburg (South Africa)
- 3. DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Private Bag 3, Wits 2050, Johannesburg (South Africa)
Description
The properties of hydroxyl groups on C(111)-(1 x 1) and reconstructed (2 x 1) surfaces at different sites and for various coverages are investigated using density functional theory. Out of the adsorption sites considered, i.e. face centred cubic, hexagonal close packed, on-top and bridge sites, the on-top site is the most stable for OH on the C(111)-(1 x 1) surface for all coverages. On the reconstructed (2 x 1) surface the on-top site is the preferred configuration. Adsorption of OH was not stable however at any site on the reconstructed C(111)-(2 x 1) relative to the (1 x 1) surface; thus adsorption of OH leads to the de-reconstruction of the former surface. Both the 0.5 and 1 monolayer (ML) coverages were able to lift the (2 x 1) surface reconstruction. Repulsion between the OH adsorbates on the (1 x 1) surface sets in for coverages greater than 0.5 ML. A general decrease in the work function with increasing OH coverage was observed on both the (1 x 1) and (2 x 1) surfaces relative to the values of their respective clean surfaces. Regarding the electronic structure, O 2p states on the reconstructed (2 x 1) surface are observed at around - 21, - 8.75 , - 5 and - 2.5 eV, while O 2s states are present at - 22.5 eV. On the (1 x 1) surface (for 0.33 ML in the on-top site), O 2p states occurred between - 8 and - 9 eV, - 5 and - 4 eV and at around - 2.5 eV. O 2s states are established between - 22.5 and - 21 eV. The valence band width is 21 eV, and a hybrid 2s/2p state that is characteristic of diamond is located at about 12.5 eV below the valence band minimum.
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/22/47/475005Additional details
Identifiers
- DOI
- 10.1088/0953-8984/22/47/475005;
- PII
- S0953-8984(10)57920-7;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 22
- Journal Issue
- 47
- Journal Page Range
- [10 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42030357
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; CARBON; CONFIGURATION; DENSITY FUNCTIONAL METHOD; DIAMONDS; ELECTRONIC STRUCTURE; FCC LATTICES; HCP LATTICES; HYDROXIDES; INTERACTIONS; SIMULATION; SURFACES; VALENCE; WORK FUNCTIONS
- Descriptors DEC
- CALCULATION METHODS; CARBON; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; ELEMENTS; FUNCTIONS; HEXAGONAL LATTICES; HYDROGEN COMPOUNDS; MINERALS; NONMETALS; OXYGEN COMPOUNDS; SORPTION; VARIATIONAL METHODS