Published February 2006 | Version v1
Journal article Metadata-only

Properties and interconversion of self-induced SiGe nanoislands of different shapes

Creators

  • 1. V.E.Lashkarev Institute of Semiconductor Physics, Kyiv (Ukraine)
  • 2. Institute of Microstructure Physics, Nizhnij Novgorod (Russian Federation)

Description

In this work, SiGe nanoislands formed on Si and Si0.9Ge0.1 buffer layers are studied with the use of the atomic force microscopy and Raman spectroscopy techniques. To study the island of a certain shape, the monomodal arrays of the islands of this shape (ut-clusters, pyramids, domes) were formed by means of a variation of both the thickness of a deposited Ge layer and the growth temperature

Additional details

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
Journal Volume
51
Journal Issue
no.2
Journal Page Range
p. 200-206
ISSN
0372-400X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
39117916
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BOUNDARY CONDITIONS; CADMIUM SULFIDES; ELECTRON SPECTRA; ENERGY SPECTRA; MERCURY SULFIDES; POTENTIAL ENERGY; QUANTUM DOTS; SCHROEDINGER EQUATION
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; DIFFERENTIAL EQUATIONS; ENERGY; EQUATIONS; INORGANIC PHOSPHORS; MERCURY COMPOUNDS; NANOSTRUCTURES; PARTIAL DIFFERENTIAL EQUATIONS; PHOSPHORS; SPECTRA; SULFIDES; SULFUR COMPOUNDS; WAVE EQUATIONS