Published August 7, 2006
| Version v1
Journal article
Indium oxide 'rods in dots' nanostructures
- 1. Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)
Description
The authors have demonstrated a special indium oxide (In2O3) 'rods in dots' nanostructure with high nanorod sheet density of over 1012 cm-2. The approach has been realized through depositing controllable individual In2O3 nanorods in both number and shape within a single porous alumina membrane (PAM) nanochannel under radio frequency magnetron sputtering. The authors further discussed in detail effects of the PAM configurations (pore diameter and thickness) and sputtering conditions (substrate temperature and argon pressure) on the formation of the In2O3 nanostructure
Additional details
Identifiers
- DOI
- 10.1063/1.2335665;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 89
- Journal Issue
- 6
- Journal Page Range
- p. 063113-063113.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38023637
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; ARGON; CRYSTAL GROWTH; DEPOSITION; INDIUM OXIDES; MEMBRANES; NANOSTRUCTURES; POROUS MATERIALS; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; FLUIDS; GASES; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RARE GASES
Optional Information
- Notes
- (c) 2006 American Institute of Physics