Temperature dependence of the photocurrent in p-type CdTe
Description
The photocurrent (PC) spectroscopy of the CdTe (111)A face has been investigated at temperatures ranging from 10 to 300 K. In the PC experiment, peaks corresponding to the band gap appeared. From the results, the temperature dependence of the optical band gap could be expressed by using the empirical equation Eg(T) = Eg(0) - (5.63 x 10-4)T2/(T + 171), but the behavior of PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. From the relation of log Jph vs. 1/T, where Jph is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Therefore, the trapping centers due to native defects and impurities in CdTe are suggested to be the causes of the decrease in the PC signal with decreasing temperature.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 43
- Journal Issue
- 6
- Series
- 24 refs, 3 figs
- Journal Page Range
- p. 1101-1104
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 41071374
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; BRIDGMAN METHOD; CADMIUM TELLURIDES; GRADED BAND GAPS; IMPURITIES; MONOCRYSTALS; PHOTOCURRENTS; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; CURRENTS; ELECTRIC CURRENTS; ENERGY; MATERIALS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS