Published November 2005 | Version v1
Journal article

Anisotropy of hopping conductivity in TIGaSe2, crystal

  • 1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku (Azerbaijan)

Description

Full Text: The temperature dependences of electrical conductivity of a chained semiconductor crystal TIGaTe2 in a direction of chains and perpendicularly have been investigated. It was established that in a constant electrical field in both crystallographic directions took place hopping conductivity with variable length of a jump on located near Fermi level. The energy activation of conductivity has been determined. It was appreciated density of a condition in a vicinity of a Fermi level, their disorder, radius of localization, average distance of jumps of carriers

Availability note (English)

Available in abstract form only, full text entered in this record

Additional details

Additional titles

Original title (Russian)
Анизотропия прийковоы проводимости в монокристалле TIGaTe

Publishing Information

Journal Title
Vestnik Natsionalnogo Issledovatelskogo Yadernogo Universiteta «MEPhI»
Journal Volume
45
Journal Issue
4
Journal Page Range
5 p.
ISSN
2304-7453

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
44045495
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Translation
Descriptors DEI
CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; FERMI LEVEL
Descriptors DEC
ELECTRICAL PROPERTIES; ENERGY LEVELS; PHYSICAL PROPERTIES

Optional Information

Notes
Translated from Russian