Published November 2005
| Version v1
Journal article
Anisotropy of hopping conductivity in TIGaSe2, crystal
Creators
- 1. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku (Azerbaijan)
Description
Full Text: The temperature dependences of electrical conductivity of a chained semiconductor crystal TIGaTe2 in a direction of chains and perpendicularly have been investigated. It was established that in a constant electrical field in both crystallographic directions took place hopping conductivity with variable length of a jump on located near Fermi level. The energy activation of conductivity has been determined. It was appreciated density of a condition in a vicinity of a Fermi level, their disorder, radius of localization, average distance of jumps of carriers
Availability note (English)
Available in abstract form only, full text entered in this recordAdditional details
Additional titles
- Original title (Russian)
- Анизотропия прийковоы проводимости в монокристалле TIGaTe
Publishing Information
- Journal Title
- Vestnik Natsionalnogo Issledovatelskogo Yadernogo Universiteta «MEPhI»
- Journal Volume
- 45
- Journal Issue
- 4
- Journal Page Range
- 5 p.
- ISSN
- 2304-7453
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 44045495
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; FERMI LEVEL
- Descriptors DEC
- ELECTRICAL PROPERTIES; ENERGY LEVELS; PHYSICAL PROPERTIES
Optional Information
- Notes
- Translated from Russian