Published September 1987 | Version v1
Journal article Metadata-only

O2 plasma etch rate reduction on synchrotron radiation exposed PMMA film

Creators

  • 1. NTT Electrical Communications Lab., Atsugi, Kanagawa (Japan)

Description

The etch rate of PMMA film in O2 plasma is found to be reduced by synchrotron radiation (SR) exposure. This phenomenon is accompanied by a reduction in film thickness. IR and XPS analyses reveal that this thickness reduction is caused by scission and removal of the ester side chain. Etch rate of the SR-exposed film decreases to about 1/3 of the unexposed film. This characteristic makes dry-development possible. (author)

Additional details

Publishing Information

Journal Title
Jpn. J. Appl. Phys., Part 2
Journal Volume
26
Journal Issue
9
Series
Jpn. J. Appl. Phys., Part 2.
Journal Page Range
L1428-L1430
ISSN
0021-4922
CODEN
JAPLD

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
19038027
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BINDING ENERGY; ETCHING; FILMS; INFRARED SPECTRA; OXYGEN; PHYSICAL RADIATION EFFECTS; PLASMA; PMMA; SCANNING ELECTRON MICROSCOPY; SYNCHROTRON RADIATION; THICKNESS
Descriptors DEC
BREMSSTRAHLUNG; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; ENERGY; ESTERS; MICROSCOPY; NONMETALS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYACRYLATES; POLYMERS; POLYVINYLS; RADIATION EFFECTS; RADIATIONS; SPECTRA