Published February 1983
| Version v1
Journal article
Diffuse X-ray scattering near the Bragg reflection of P-doped Czochralski silicon
Description
Bragg line profile and high resolution diffuse X-ray scattering measurements around the (400) reciprocal lattice point of dislocation-free Czochralski Si single crystals P-doped have shown defects of interstitial nature with typical size about 1000 A. (Author)
Abstract (Portuguese)
Medidas do perfil de linha de reflexao de Bragg e do espalhamento difuso, em condicao de alta resolucao, ao redor do no (400) da rede reciproca de cristais de Si Czochralski, livres de discordancias, dopados com P, mostraram defeitos de natureza intersticial com dimensoes da ordem de 1000 A. (Autor)Additional details
Publishing Information
- Journal Title
- Rev. Bras. Fis.
- Journal Volume
- especial)
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 425-430
- ISSN
- 0374-4922
Conference
- Title
- 1. Brazilian School on Semiconductor Physics.
- Dates
- 31 Jan - 11 Feb 1983.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 16079039
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BRAGG REFLECTION; CRYSTAL LATTICES; EXPERIMENTAL DATA; P-TYPE CONDUCTORS; SILICON; X RADIATION
- Descriptors DEC
- CRYSTAL STRUCTURE; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; IONIZING RADIATIONS; MATERIALS; NUMERICAL DATA; RADIATIONS; REFLECTION; SEMICONDUCTOR MATERIALS; SEMIMETALS