Published August 2007
| Version v1
Journal article
Measurement of the transient response of semiconductor devices to ionizing radiation
Creators
- 1. Naval Research Laboratory, Washington, DC 20375 (United States)
- 2. CEA/DIF, 9680 Bruyeres-le-Chatel (France)
Description
Recent developments in the measurement of heavy-ion induced charge-collection transients of semiconductor devices are described. The information content of transient SET measurement is significantly enhanced relative to that of conventional charge-collection measurement. Examples of recent measurements on InP HEMT and SOI NMOS devices are presented
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2007.04.280;
- PII
- S0168-583X(07)00895-6;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 261
- Journal Issue
- 1-2
- Journal Page Range
- p. 1137-1141
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 19. International conference on the application of accelerators in research and industry
- Dates
- 20-25 Aug 2006
- Place
- Fort Worth, TX (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39025121
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; EQUIPMENT; HEAVY IONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; IONIZING RADIATIONS; SEMICONDUCTOR DEVICES; TRANSIENTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.